手机锂离子电池保护板的MOS管DU8209规格书DU8209
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Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( mW ) Max
ID
6A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
26 @ V G S = 4.0V 40 @ V G S = 2.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D1 D2
T S S OP
D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2
G1
G2
(T OP V IE W)
S1
S2
ABS OLUTE MAXIMUM R ATINGS (T A =25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous b -P ulsed
a
S ymbol V DS V GS ID I DM
a
Limit 20 12 6 24 1.7 1.5 -55 to 150
Unit V V A A A W C
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation
a
IS PD T J , T S TG
Operating Junction and S torage Temp……
