原创 K4B4G1646B

        K4B4G1646B是SAMSUNG电子公司推出的一款DDR3同步动态随机存取记忆体。该芯片对一般通用设备的传输速率就能达到2133Mb/sec/pin (DDR3-2133) ，它具有可编程CWL ，内置电容、终止端ODT、异步重启等DDR3 SDRAM特征，其主要应用于：通用计算设备，如台式机和笔记本电脑，主记忆体等。

K4B4G1646B的采购信息如下：

 K4B4G1646B的主要功能特性包括：

1、JEDEC standard  1.5V(1.425V~1.575V)

2、VDDQ =  1.5V(1.425V~1.575V)

3、400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,

4、667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,

5、933MHz fCK for 1866Mb/sec/pin, 1066 MHz fCK for 2133Mb/sec/pin

6、8 Banks

7、Programmable CAS Latency(posted CAS):  5,6,7,8,9,10,11,12,13,14

8、Programmable Additive Latency: 0, CL-2 or CL-1 clock

9、Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333) , 8 (DDR3-1600), 9 (DDR3-1866) and 10 (DDR3-2133)

10、8-bit pre-fetch

11、Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only),4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]

12、Bi-directional Differential Data-Strobe

13、Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

14、On Die Termination using ODT pin

15、Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C

16、Support Industrial Temp ( -40 ∼ 85°C )

17、Asynchronous Reset

18、Package：96 balls FBGA - x16

19、All of Lead-Free products are compliant for RoHS

20、All of products are Halogen-free

K4B4G1646B的管脚图如下：