振蕩器的設計基礎知識Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Introduction This application note describes a method of designing oscillators using small signal s parameters. The background theory is first developed to produce the design equations. These equations are then applied to develop three different oscillators: a 4 GHz bipolar lumped resonator oscillator, a 4 GHz bipolar dielectric resonator oscillator, and a 12 GHz GaAs FET dielectric resonator oscillator. Theory Microwave transistors can be used for both amplifier and oscillator applications. From the small signal s parameters of the transistor, the stability factor k can be calculated from: k= 1 + D s 11 s 22 2 s 21 s 12……