使用MOSFET & IGBTUSE OF CRYOELECTRONICS TO REDUCE POWER LOSSES C.J. Hawley*, D. Cuiuri** and S. Gower* *School of Electrical, Computer and Telecommunications Engineering, University of Wollongong **Faculty of Engineering, University of Wollongong Abstract The operational characteristics of power electronics operating at ambient temperatures are well known. Less well known are the characteristics of these devices when operating at cryogenic temperatures. This emerging field is known as cryoelectronics. The primary driver for operation at reduced temperatures is the promise of a resultant reduction in device operation losses. The operating characteristics of Metal Oxide Silicon Field Effect Transistors (MOSFETs) and Insulated Gate Bipolar Transistors (IGBTs) at Liquid Nitrogen (LN) temperature have been expe……