IRFP250 IRFP250 Data Sheet July 1999 File Number 2330.3 33A, 200V, 0.085 Ohm, N-Channel Features Power MOSFET 33A, 200V This N-Channel enhancement mode silicon gate power eld rDS(ON) = 0.085 effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specied level of Single Pulse Avalanche Energy Rated energy in t……