CE65H110DNDl系列650v、110mΩ氮化镓（GaN）FET是常关器件。

Corenergy GaN FET通过更低的栅极电荷、更快的开关速度和更低的动态导通电阻提供了更好的效率，与传统的硅（Si）器件相比具有显著的优势。

Description

The CE65H110DNDl Series 650v, 110mΩgallium nitride(GaN) FETs are normally-offdevices.

Corenergy GaN FETs offer better efficiencythrough lower gate charge,faster switchingspeeds,and lower dynamic on-resistance,delivering significant advantages over traditionalsilicon (Si) devices.

Corenergyis a leading-edge wide band gapsupplier with world-class innovation .

Application

Adapter

Renewable energy

eTelecom and data-com

Servo motors

Industrial

Automotive

General Features

Easy to drive-compatible with standard gate drivers

Low conduction and switching losses

RoHS compliant and Halogen-free

Benefits

Increased efficiency through fast switching

Increased power density

Reduced system size and weight

系统描述/System Description

应⽤氮化镓 CE65H110DNDI 设计 20V16.5A 330W 笔电适配器

应⽤拓扑结构为 PFC+LLC

平均效率可达：94.75%

最⾼效率：95.70%

保护功能：输出过压保护；输出过流保护；输⼊⽋压保护 ；短路保护

输出电压调整率：±5%

线性电压调整率：±3%

额定功率：330W

环境温度：40℃

外壳尺⼨：L*W*H/163.2*77.2*30.5mm