本帖最后由 windowsww_124656002 于 2022-5-8 13:47 编辑

The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.


The Gen IV SuperGaN™ platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

详细资料下载：


GaN器件选型清单2022-5-8.pdf (1.05 MB, 下载次数: 0)