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ABSOLUTE MAXIMUM RATINGS(TC=25°Cunless otherwise noted)
| Parameter | Symbol | Rating | Unit | |
TO-247 | ||||
| Drain-Source Voltage | VDSS | 1200 | V | |
| Continuous Drain Current | TC = 25°C，VGS=18V | ID | 60 | A |
| Single Pulse Avalanche Energy | L=10mH | EAS | 460 | mJ |
| | L=10mH | IAS | 9.6 | A |
| Pulsed Drain Current | IDM | 240 | A | |
| Recommend Gate Source Voltage(Static) | VGS,op | -3/+18 | V | |
| Maximum Gate Source Voltage(AC (f > 1Hz)) | VGS,max | -5/+22 | V | |
| Power Dissipation | TC =25°C | PD | 271.7 | W |
| Soldering Temperature | TL | 260 | °C | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | 150,-55~150 | °C | |
| Thermal Resistance, Junction to Case | RθJC | 0.46 | °C / W | |
ELECTRICALCHARACTERISTICS（TJ=25℃,unless otherwise Noted）
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
OFF CHARACTERISTICS | ||||||
Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 1200 | V | ||
Zero Gate Voltage Drain Current | IDSS | VDS=1200V, VGS=0V | 10 | uA | ||
Gate-Body Leakage Current, Forward | IGSS | VGS=18V,VDS = 0V | 250 | nA | ||
ON CHARACTERISTICS | ||||||
Gate Threshold Voltage | VGS(TH) | VDS=10V, ID=5mA | 1.5 | 3.0 | V | |
Drain-Source On-State Resistance | RDS(ON) | VGS=20V, ID=30A | 36 | 43 | mΩ | |
VGS=18V, ID=30A | 40 | 48 | ||||
VGS=15V, ID=30A | 50 | 60 | ||||
VGS=18V, ID=30A, TJ=150℃ | 80 | |||||
DYNAMIC PARAMETERS | ||||||
Input Capacitance | CISS | VDS=25V,VGS=0V, f=1MHz,VAC=25mV | 2400 | pF | ||
Output Capacitance | COSS | 120 | pF | |||
Reverse Transfer Capacitance | CRSS | 18 | pF | |||
SWITCHING PARAMETERS | ||||||
Total Gate Charge(Note2) | QG | VDD =800V, VGS =-3/+18 V, ID=30A | 170 | nC | ||
Gate Source Charge | QGS | 10 | nC | |||
Gate Drain Charge | QGD | 48 | nC | |||
Gate plateau voltage | Vpl | 2.6 | V | |||
Turn-ON Delay Time | tD(ON) | VDS=800V, ID=30A, VGS = -3/+18 V ,RG=25Ω | 45 | ns | ||
Turn-ON Rise Time | tR | 119 | ns | |||
Turn-OFF Delay Time | tD(OFF) | 123 | ns | |||
Turn-OFF Fall-Time | tF | 145 | ns | |||
Internal Gate Resistance | RG(int.) | f =1MHz, VAC=25mV | 2.4 | Ω | ||
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
Drain-Source Diode Forward Voltage | VSD | IS=30A, VGS=-3V | 4.6 | V | ||
Continuous Diode Forward Current | IS | VGS = -3V | 60 | A | ||
Reverse Recovery Time | trr | VGS = -3/+18V,IF = 60A, VDS=400V, di/dt =500A /μs | 62 | ns | ||
Reverse Recovery Charge | Qrr | 298 | nC | |||
Peak Reverse Recovery Current | Irrm | 10 | A | |||
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