料号:DO2021AA
P管
电压电流:-20V-7A
封装:S0T-23-3
应用:消费类工业类领域等
Description:
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.
Features:
1) VDS=-20V,ID=-7A,RDS(ON)<24.5mΩ@VGS=-4.5V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.